Sub-[mu]m-FET

Sub-[mu]m-FET
прил.
микроэл. полевой транзистор с субмикронным каналом

Универсальный немецко-русский словарь. . 2011.

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  • MOS-FET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia

  • MOS-Fet — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia

  • si — 1. si [ si ] conj. et n. m. inv. • 842; lat. si REM. Si devient s devant il, ils. I ♦ SI, hypothétique. Introduit soit une condition (à laquelle correspond une conséquence dans la principale), soit une simple supposition ou éventualité. ⇒ 1. cas… …   Encyclopédie Universelle

  • SI — 1. si [ si ] conj. et n. m. inv. • 842; lat. si REM. Si devient s devant il, ils. I ♦ SI, hypothétique. Introduit soit une condition (à laquelle correspond une conséquence dans la principale), soit une simple supposition ou éventualité. ⇒ 1. cas… …   Encyclopédie Universelle

  • MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

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  • Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

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  • Old English grammar — This article is part of a series on: Old English Dialects …   Wikipedia

  • Multigate device — A multigate device or multiple gate field effect transistor(MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces …   Wikipedia


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